PART |
Description |
Maker |
GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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BA1283-GS08 |
DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
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Vishay Semiconductors
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KDV275E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
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KEC[KEC(Korea Electronics)]
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KDV245 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
|
KEC(Korea Electronics)
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GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
|
JDH2S01T |
UHF Band Mixer Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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ADVANCED SEMICONDUCTOR INC
|
BAR65-02 BAR65-02W |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
|
Siemens Semiconductor G...
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BAR65-07 |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners)
|
Siemens Semiconductor G...
|
HSCH-3486 HSCH3486 |
ZERO BIAS SCHOTTKY DIODE SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor ASI
|
KDV153 KDV153A KDV153B KDV153D |
TV VHF, UHF tuner AFC VCO for UHF band radio VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
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